(China (Mainland))
Product Summary
The 2N2646 is a Silicon PN Unijuction Transistor. It is designed for use in pulse and timing circuits, sensing circuits and thyristor trigger circuits.
Parametrics
2N2646 absolute maximum ratings: (1)power dissipation:300mW; (2)RMS emitter current:50mA; (3)peak pulse emitter current:2A; (4)emitter reverse voltage:30V; (5)interbase voltage:35V; (6)operating junction temperature range:-65℃ to +125℃; (7)storage temperature range:-65℃ to +150℃.
Features
2N2646 features: (1)low peak point current:2uA; (2)low emitter reverse current:200nA; (3)passivated surface for reliablility and uniformity.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||
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 2N2646 |
Central Semiconductor |
Transistors Bipolar (BJT) Silicon Unijuction |
Data Sheet |
Negotiable |
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| Image | Part No | Mfg | Description | |
Pricing (USD) |
Quantity | ||||||||||
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2N2609 |
Central Semiconductor |
JFET P-Ch Junc FET |
Data Sheet |
Negotiable |
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2N2646 |
Central Semiconductor |
Transistors Bipolar (BJT) Silicon Unijuction |
Data Sheet |
Negotiable |
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2N2647 |
Central Semiconductor |
Transistors Bipolar (BJT) PNP Unijunction |
Data Sheet |
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2N2696 |
Other |
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Data Sheet |
Negotiable |
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