Product Summary
The IHW15N120R3 is a reverse conducting IGBT with monolithic body diode. The applications of the IHW15N120R3 includes Inductive cooking.
Parametrics
IHW15N120R3 absolute maximum ratings: (1)Collector-emitter voltage, VCE: 1200V; (2)DC collector current, limited by Tvjmax, TC= 25℃, IC: 30.0A; TC= 100℃, IC: 15.0A; (3)PUlsed collector current, tp limited by Tvjmax, ICpuls: 45A; (4)Turn off safe operating area VCE ≤ 1200V, Tvj ≤ 175℃: 45A; (5)Diode forward current, limited by Tvjmax, TC= 25℃, IF: 30A; TC= 100℃, IF: 15A; (6)Diode pulsed current, tp limited by Tvjmax, IFpuls: 45A; (7)Gate-emitter voltage, VGE: ±20V; Transient gate-emitter voltage(tp= 10μs, D < 0.010), VGE: ±25V; (8)Power dissipation, TC= 25℃, Ptot: 254W; TC= 100℃, Ptot: 127W; (9)Operating junction temperature, Tvj: -40 to +175℃; (10)Storage temperature, Tstg: -55 to +175℃; (11)Solding temperature, wavesolding 1.6mm from case for 10s: 260℃; (12)Mounting torque, M3 screw, maximum of mounting processes: M: 0.6Nm.
Features
IHW15N120R3 features:(1)Powerful monolithic body diode with low forward voltage designed for soft commutation only; (2)TrenchStop technology applications offers: very tight parameter distribution; high ruggedness, temperature stable behavior; low VCEsat; easy parallel switching capability due to positive; (3)temperature coefficient in VCEsat; (4)Low EMI; (5)Qualified according to JEDEC J-STD-020 and JESD-022 for target applications; (6)Pb-free lead plating; RoHS compliant.
Diagrams
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![]() IGBT Transistors IH SeriesRev Conduct IGBT Monolithic Body |
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![]() IGBT Transistors REVERSE CONDUCT IGBT 1200V 15A |
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![]() IHW15N120R2 |
![]() Infineon Technologies |
![]() IGBT Transistors REVERSE CONDUCT IGBT 1200V 15A |
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![]() Negotiable |
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![]() IHW15T120 |
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![]() IGBT Transistors LOW LOSS DuoPack 1200V 15A |
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