FQPF8N60C

power field effect transistor, TO220F, 600 V, Low gate charge, Fast switching

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PartNumber:: FQPF8N60C

Brand:: Fairchild Semiconductor - Fairchild | Pack: TO | D/C: 10+

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Products Upload time: 2011-08-04

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Product Summary

The FQPF8N60C N-Channel enhancement mode power field effect transistor is produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. The FQPF8N60C is well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.

Parametrics

FQPF8N60C absolute maximum ratings: (1)Drain-Source Voltage: 600 V; (2)Drain Current: Continuous (TC = 25℃): 7.5 A, Continuous (TC = 100℃): 4.6 A; (3)Drain Current - Pulsed: 30 A; (4)Gate-Source Voltage: ± 30 V; (5)Single Pulsed Avalanche Energy: 230 mJ; (6)Avalanche Current: 7.5 A; (7)Repetitive Avalanche Energy: 14.7 mJ; (8)Peak Diode Recovery dv/dt: 4.5 V/ns; (9)Power Dissipation: (TC = 25℃): 48 W, Derate above 25℃: 0.38 W/℃; (10)Operating and Storage Temperature Range: -55 to +150 ℃; (11)TL; (12)Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds: 300 ℃.

Features

FQPF8N60C features: (1)7.5A, 600V, RDS(on) = 1.2Ω @VGS = 10 V; (2)Low gate charge ( typical 28 nC); (3)Low Crss ( typical 12 pF); (4)Fast switching; (5)100% avalanche tested; (6)Improved dv/dt capability.