Product Summary

The 2SC5198 is a silicon NPN triple diffused type transistor for power amplifier applications.

Parametrics

2SC5198 absolute maximum ratings: (1)Collector-base voltage VCBO: 140 V; (2)Collector-emitter voltage VCEO: 140 V; (3)Emitter-base voltage VEBO: 5 V; (4)Collector current IC: 10 A; (5)Base current IB: 1 A; (6)Collector power dissipation(Tc = 25℃): 100 W; (7)Junction temperature Tj: 150 ℃; (8)Storage temperature range Tstg: -55 to 150℃.

Features

2SC5198 features: (1)High breakdown voltage: VCEO = 140 V (min); (2)Complementary to 2SA1941; (3)Suitable for use in 70-W high fidelity audio amplifier output stage.

Diagrams

2SC5198 dimensions

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
2SC5198
2SC5198
Other

Data Sheet
Negotiable 
2SC5198-O(Q)
2SC5198-O(Q)
Toshiba
Transistors Bipolar (BJT) NPN VCEO 140V Ic 10A PC 100W
Data Sheet
0-2650: $0.67
2650-4000: $0.67
4000-5000: $0.62
5000-10000: $0.59
2SC5198-O(Q,T)
2SC5198-O(Q,T)
Toshiba
Transistors Bipolar (BJT) NPN VCEO 140V Ic 10A PC 100W
Data Sheet
0-1: $0.33
1-10: $0.31
10-100: $0.28
100-250: $0.28