(China (Mainland))
Product Summary
The 2n5088 is a NPN General Purpose Amplifier. This device is designed for low noise, high gain, general purpose amplifier applications at collector currents from 1μA to 50 mA.
Parametrics
2n5088 absolute maximum ratings: (1)VCEO Collector-Emitter Voltage: 30V; (2)VCBO Collector-Base Voltage: 35V; (3)VEBO Emitter-Base Voltage: 4.5 V; (4)IC Collector Current - Continuous: 100 mA; (5)TJ, Tstg Operating and Storage Junction Temperature Range: -55 to +150℃.
Features
2n5088 features: (1)PD, Total Device Dissipation: 625mW; 5.0mW/℃ when Derate above 25℃; (2)RθJC, Thermal Resistance, Junction to Case: 83.3℃/W; (3)RθJA, Thermal Resistance, Junction to Ambient: 200℃/W.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
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 2N5088_D11Z |
Fairchild Semiconductor |
Transistors Bipolar (BJT) NPN Transistor General Purpose |
Data Sheet |
Negotiable |
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2N5088_D74Z |
Fairchild Semiconductor |
Transistors Bipolar (BJT) |
Data Sheet |
Negotiable |
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2N5088_D75Z |
Fairchild Semiconductor |
Transistors Bipolar (BJT) |
Data Sheet |
Negotiable |
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2N5088_D81Z |
Fairchild Semiconductor |
Transistors Bipolar (BJT) NPN Transistor General Purpose |
Data Sheet |
Negotiable |
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2N5088_D81Z_Q |
Fairchild Semiconductor |
Transistors Bipolar (BJT) NPN Transistor General Purpose |
Data Sheet |
Negotiable |
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2N5088BU |
Fairchild Semiconductor |
Transistors Bipolar (BJT) NPN Transistor General Purpose |
Data Sheet |
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2N5088G |
ON Semiconductor |
Transistors Bipolar (BJT) 50mA 35V NPN |
Data Sheet |
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2N5088RLRA |
ON Semiconductor |
Transistors Bipolar (BJT) 50mA 35V NPN |
Data Sheet |
Negotiable |
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