(China (Mainland))
Product Summary
The 2N2647 is the silicon planar unijunction transistor which has a structure resulting in lower saturation voltage, peak-point current and valley current as well as a much higher base-one peak pulse voltage. In addition, the device is much faster switch. The 2N2647 is intended for applications where a low emitter leakage current and a low peak point emitter current (trigger current) are required and also for triggering high power SCR.
Parametrics
2N2647 absolute maximum ratings: (1)Base 1 – Emitter Voltage: 30 V; (2)Base 2 – Emitter Voltage: 30 V; (3)RMS Emitter Current: 50 mA; (4)Emitter Peak Current: 2 A; (5)Total Power Dissipation: 300 mW; (6)Maximum Junction: 150℃; (7)Storage Temperature Range: -55 to +175℃.
Features
2N2647 features: (1)Low peak point current: 2μA(max); (2)Low emitter reverse current: 200nA(max); (3)Passivated surface for reliability and uniformity.
Diagrams
| Image | Part No | Mfg | Description |  |
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 2N2647 |
Central Semiconductor |
Transistors Bipolar (BJT) PNP Unijunction |
Data Sheet |
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| Image | Part No | Mfg | Description | |
Pricing (USD) |
Quantity | ||||||||||
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2N2609 |
Central Semiconductor |
JFET P-Ch Junc FET |
Data Sheet |
Negotiable |
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2N2646 |
Central Semiconductor |
Transistors Bipolar (BJT) Silicon Unijuction |
Data Sheet |
Negotiable |
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2N2647 |
Central Semiconductor |
Transistors Bipolar (BJT) PNP Unijunction |
Data Sheet |
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2N2696 |
Other |
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Data Sheet |
Negotiable |
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