Product Summary

The BLF574 is a 500 W to 600 W LDMOS power transistor for broadcast applications and industrial applications in the HF to 500 MHz band.

Parametrics

BLF574 absolute maximum ratings: (1)VDS drain-source voltage: 110 V; (2)VGS gate-source voltage: -0.5 +11 V; (3)ID drain current: 56 A; (4)Tstg storage temperature: -65 +150 ℃; (5)Tj junction temperature: 225 ℃.

Features

BLF574 features: (1)Typical CW performance at frequency of 225 MHz, a supply voltage of 50 V and aIDq of 1000 mA; (2)Easy power control; (3)Integrated ESD protection; (4)Excellent ruggedness; (5)High efficiency; (6)Excellent thermal stability; (7)Designed for broadband operatio(10 MHz to 500 MHz); (8)Compliant to Directive 2002/95/EC, regarding Restrictioof Hazardous Substances.

Diagrams

BLF574 Class-AB common-source production test circuit

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
BLF574
BLF574
NXP Semiconductors
Transistors RF MOSFET Power 500-600W, HF-500MHz
Data Sheet
Negotiable 
BLF574,112
BLF574,112
NXP Semiconductors
Transistors RF MOSFET Power Trans MOSFET N-CH 110V 42A 5-Pin
Data Sheet
0-1: $117.87
1-25: $108.11