Product Summary
The BSP135 is a SIPMOSa small-signal transistor.
Parametrics
BSP135 absolute maximum ratings: (1)Drain-source voltage VDS: 600 V; (2)Drain-gate voltage, RGS 20 kW VDGR: 600V; (3)Gate-source voltage VGS: ± 14V; (4)Gate-source peak voltage, aperiodic Vgs: ± 20; (5)Continuous drain current, TA = 44 ℃ ID: 0.100 A; (6)Pulsed drain current, TA = 25 ℃ ID puls: 0.30 A; (7)Max. power dissipation, TA = 25 ℃ Ptot: 1.7 W; (8)Operating and storage temperature range Tj, Tstg: – 55 to + 150 ℃.
Features
BSP135 features: (1)VDS 600 V; (2)ID 0.100 A; (3)RDS(on) 60 W; (4)N channel; (5)Depletion mode; (6)High dynamic resistance; (7)Available grouped in VGS(th).
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||||
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BSP135 |
Other |
Data Sheet |
Negotiable |
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BSP135 L6327 |
Infineon Technologies |
MOSFET SIPMOS SM-Signal Transistor 600V .02A |
Data Sheet |
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BSP135 L6433 |
Infineon Technologies |
MOSFET SIPMOS SM-Signal Transistor 600V .02A |
Data Sheet |
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BSP135 L6906 |
Infineon Technologies |
MOSFET SIPMOS SM-Signal Transistor 600V .02A |
Data Sheet |
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BSP135 E6906 |
MOSFET N-CH 600V 120MA SOT-223 |
Data Sheet |
Negotiable |
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BSP135 E6327 |
MOSFET N-CH 600V 120MA SOT-223 |
Data Sheet |
Negotiable |
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