(China (Mainland))
Product Summary
The MRF6V2300NBR is a RF Power Field Effect Transistor. It is designed primarily for CW large-signal output and driver applications with frequencies up to 600 MHz. The MRF6V2300NBR unmatched and is suitable for use in industrial, medical and scientific applications.
Parametrics
MRF6V2300NBR absolute maximum ratings: (1)Drain-Source Voltage, VDSS: -0.5, +110 Vdc; (2)Gate-Source Voltage, VGS: -0.5, +10 Vdc; (3)Storage Temperature Range, Tstg: - 65 to +150℃; (4)Case Operating Temperature, TC: 150℃; (5)Operating Junction Temperature, TJ: 200℃.
Features
MRF6V2300NBR features: (1)Integrated ESD Protection; (2)Excellent Thermal Stability; (3)Facilitates Manual Gain Control, ALC and Modulation Techniques; (4)200℃ Capable Plastic Package; (5)RoHS Compliant; (6)In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
Diagrams
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 MRF6V2300NBR1 |
Freescale Semiconductor |
Transistors RF MOSFET Power VHV6 300W TO272WB4N |
Data Sheet |
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MRF6V2300NBR5 |
Freescale Semiconductor |
Transistors RF MOSFET Power VHV6 300W Latrl N-Ch SE Broadband MOSFET |
Data Sheet |
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