Product Summary
The SD1219 is an NPN silicon RF power transistor. The SD1219 is designed for 12.5 V Collector Modulated AM Class C Amplifier Service in the 118 to 136 MHz Avionics Communication Band.
Parametrics
SD1219 absolute maximum ratings: (1)IC: 6.5 A; (2)VCE: 35 V; (3)VCB: 65 V; (4)PDISS: 75 W at TC = 25℃; (5)TJ: -65 to +200℃; (6)TSTG: -65 to +150℃; (7)θJC: 2.3℃/W.
Features
SD1219 features: (1)PG = 8 dB Typical at 60 W/ 175 MHz; (2)Guaranteed 13.5 and 28 V Performance; (3)Omnirel Metallization System.
Diagrams

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![]() SD1219 |
![]() Other |
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![]() Data Sheet |
![]() Negotiable |
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| Image | Part No | Mfg | Description | ![]() |
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![]() SD120P |
![]() Other |
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![]() Data Sheet |
![]() Negotiable |
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![]() SD12-100-R |
![]() Cooper Bussmann |
![]() Power Inductors 10uH 0.818A 0.2844ohms |
![]() Data Sheet |
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![]() SD12-102-R |
![]() Cooper Bussmann |
![]() Power Inductors 1000uH 0.086A 17.2ohms |
![]() Data Sheet |
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![]() SD1219 |
![]() Other |
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![]() Data Sheet |
![]() Negotiable |
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![]() SD12-1R2 |
![]() Other |
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![]() Data Sheet |
![]() Negotiable |
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![]() SD1224-02 |
![]() Advanced Semiconductor, Inc. |
![]() Transistors RF Bipolar Power RF Transistor |
![]() Data Sheet |
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(China (Mainland))









