Product Summary

The STGW19NC60HD IGBT utilizes the advanced Power MESH process resulting in an excellent trade-off between switching performance and low on-state behavior. The applications of the STGW19NC60HD include High frequency motor controls, SMPS and PFC in both hard switch and resonant topologies, Motor drives.

Parametrics

STGW19NC60HD absolute maximum ratings: (1)Collector-emitter voltage (VGE = 0): 600 V; (2)Collector current (continuous) at TC = 25 ℃: 40 to 42 A; (3)Collector current (continuous) at TC = 100 ℃: 19 to 21 A; (4)Turn-off latching current: 40 A; (5)Pulsed collector current: 40 A; (6)Diode RMS forward current at TC = 25 ℃: 20 A; (7)Surge not repetitive forward current tp=10 ms sinusoidal: 50 A; (8)Gate-emitter voltage: ±20 V; (9)Total dissipation at TC = 25 ℃: 130 to 140 W; (10)Operating junction temperature: -55 to 150 ℃.

Features

STGW19NC60HD features: (1)Low on-voltage drop (VCE(sat)); (2)Low CRES / CIES ratio (no cross-conduction susceptibility); (3)Very soft ultra fast recovery anti-parallel diode.

Diagrams

STGW19NC60HD schematic diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
STGW19NC60HD
STGW19NC60HD
STMicroelectronics
IGBT Transistors 19 A - 600 V Very fast IGBT
Data Sheet
0-310: $1.07
310-500: $0.94
500-1000: $0.77
1000-2000: $0.73
Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
STGW12NB60H
STGW12NB60H
STMicroelectronics
IGBT Transistors N-Ch 600 Volt 12 Amp
Data Sheet
Negotiable 
STGW12NB60HD
STGW12NB60HD
Other

Data Sheet
Negotiable 
STGW19NC60HD
STGW19NC60HD
STMicroelectronics
IGBT Transistors 19 A - 600 V Very fast IGBT
Data Sheet
0-310: $1.07
310-500: $0.94
500-1000: $0.77
1000-2000: $0.73
STGW20NB60H
STGW20NB60H
STMicroelectronics
IGBT Transistors N-Ch 600 Volt 12 Amp
Data Sheet
Negotiable 
STGW20NB60HD
STGW20NB60HD
STMicroelectronics
IGBT Transistors N-Ch 600 Volt 12 Amp
Data Sheet
Negotiable 
STGW20NB60K
STGW20NB60K
Other

Data Sheet
Negotiable