(China (Mainland))
Product Summary
The 2SK2975 is a MOS FET type transistor specifically designed for VHF/UHF power amplifiers applications.
Parametrics
2SK2975 absolute maximum ratings: (1)Drain to source voltage: 30V; (2)Gate to source voltage: ±20V; (3)Channel dissipation, Tc=25℃: 10W; (4)Junction temperature: 175℃; (5)Storage temperature: -40 to +110V.
Features
2SK2975 features: (1) High power gain: Gpe 38.4dB @ VDD=9.6V,f=450MHz, Pin=30dBm; (2)High efficiency:55% typ; (3)Source case type seramic package (connected internally to source).
Diagrams
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 2SK2975 |
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Data Sheet |
Negotiable |
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2SK2002-01MR |
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2SK2003-01MR |
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Negotiable |
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2SK2007 |
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Negotiable |
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2SK2008 |
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Negotiable |
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2SK2009 |
Other |
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Negotiable |
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2SK2010 |
Other |
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Negotiable |
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