Product Summary

The BLF578 is a 1200 W LDMOS power transistor for broadcast applications and industrial applications in the HF to 500 MHz band. The applications of the BLF578 include Industrial, scientific and medical applications, Broadcast transmitter applications.

Parametrics

BLF578 absolute maximum ratings: (1)drain-source voltage: 110 V; (2)gate-source voltage: -0.5 to +11 V; (3)drain current: 88 A; (4)storage temperature: -65 to +150 ℃; (5)junction temperature: 225 ℃.

Features

BLF578 features: (1)Typical pulsed performance at frequency of 225 MHz, a supply voltage of 50 V and an IDq of 40 mA, a tp of 100 μs with δ of 20 %: Output power = 1200 W, Power gain = 24 dB, Efficiency = 71 %; (2)Easy power control; (3)Integrated ESD protection; (4)Excellent ruggedness; (5)High efficiency; (6)Excellent thermal stability; (7)Designed for broadband operation (10 MHz to 500 MHz); (8)Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS).

Diagrams

BLF578 circuit diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
BLF578
BLF578
NXP Semiconductors
Transistors RF MOSFET Power 1200W, HF-500MHz
Data Sheet
Negotiable 
BLF578,112
BLF578,112
NXP Semiconductors
Transistors RF MOSFET Power TRANSISTOR PWR LDMOS
Data Sheet
0-42: $187.82
BLF578XR,112
BLF578XR,112
NXP Semiconductors
Transistors RF MOSFET Power Pwr LDMOS transistor transistor
Data Sheet
0-45: $172.80
45-100: $168.53
BLF578XRS,112
BLF578XRS,112
NXP Semiconductors
Transistors RF MOSFET Power 500MHz 110V 23.5dB
Data Sheet
0-45: $172.80