(China (Mainland))
Product Summary
The IRLML2402TRPBF is a power MOSFET. Fifth generation HEXFETs from international recitifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that the IRLML2402TRPBF is well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
Parametrics
IRLML2402TRPBF maximum ratings: (1)ID@TA=25℃ Continuous drain current,VGS@4.5V: 1.2A; (2)ID@TA=70℃ Continuous drain current,VGS@4.5V: 0.95A; (3)IDM Pulsed drain current: 7.4A; (4)Power dissipation: 540mW; (5)Linear derating voltage: ±12V; (6)Peak diode recovery: 5.0V/ns; (7)Junction and storage temperature range: -55 to +150℃.
Features
IRLML2402TRPBF features: (1)Generation V Technology; (2)Ultra low on-resistance; (3)N-channel MOSFET; (4)SOT-23 footprint; (5)Low profile<1.1mm; (6)Available in tape and reel; (7)Fast switching.
Diagrams
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 IRLML2402TRPBF |
International Rectifier |
MOSFET MOSFT 20V 1.2A 250mOhm 2.6nC LogLvl |
Data Sheet |
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Data Sheet |
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IRLML2402TRPBF |
International Rectifier |
MOSFET MOSFT 20V 1.2A 250mOhm 2.6nC LogLvl |
Data Sheet |
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