Product Summary
The SPP100N06S2-05 is a Power-Transistor.
Parametrics
SPP100N06S2-05 absolute maximum ratings: (1)Continuous drain current, ID: 100A; (2)Pulsed drain current, ID puls: 400A; (3)Avalanche energy, single pulse, EAS: 810 mJ; (4)Repetitive avalanche energy, limited by Tjmax, EAR: 30mJ; (5)Reverse diode dv/dt, dv/dt: 6 kV/μs; (6)Gate source voltage, VGS: ±20 V; (7)Power dissipation, Ptot: 300 W; (8)Operating and storage temperature, Tj, Tstg: -55 to +175℃.
Features
SPP100N06S2-05 features: (1)N-Channel; (2)Enhancement mode; (3)175℃ operating temperature; (4)Avalanche rated; (5)dv/dt rated.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
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SPP100N06S2-05 |
MOSFET N-CH 55V 100A TO-220 |
Data Sheet |
Negotiable |
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Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
SPP100N06S2-05 |
MOSFET N-CH 55V 100A TO-220 |
Data Sheet |
Negotiable |
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SPP15P10PL G |
Infineon Technologies |
MOSFET P-CH 100V 15A |
Data Sheet |
Negotiable |
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SPP11N60C2 |
Other |
Data Sheet |
Negotiable |
|
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SPP18P06P H |
Infineon Technologies |
MOSFET SIPMOS Power Transistor |
Data Sheet |
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SPP10N10L |
MOSFET N-CH 100V 10.3A TO-220 |
Data Sheet |
Negotiable |
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SPP133R0JLFTR |
IRC |
Wirewound Resistors - Through Hole 33 OHM 5% 1W |
Data Sheet |
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