(China (Mainland))
Product Summary
The SPP100N06S2-05 is a Power-Transistor.
Parametrics
SPP100N06S2-05 absolute maximum ratings: (1)Continuous drain current, ID: 100A; (2)Pulsed drain current, ID puls: 400A; (3)Avalanche energy, single pulse, EAS: 810 mJ; (4)Repetitive avalanche energy, limited by Tjmax, EAR: 30mJ; (5)Reverse diode dv/dt, dv/dt: 6 kV/μs; (6)Gate source voltage, VGS: ±20 V; (7)Power dissipation, Ptot: 300 W; (8)Operating and storage temperature, Tj, Tstg: -55 to +175℃.
Features
SPP100N06S2-05 features: (1)N-Channel; (2)Enhancement mode; (3)175℃ operating temperature; (4)Avalanche rated; (5)dv/dt rated.
Diagrams
| Image | Part No | Mfg | Description |  |
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 SPP100N06S2-05 |
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MOSFET N-CH 55V 100A TO-220 |
Data Sheet |
Negotiable |
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| Image | Part No | Mfg | Description | |
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SPP100N03S2L-03 |
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MOSFET N-CH 30V 100A TO-220AB |
Data Sheet |
Negotiable |
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SPP100N06S2-05 |
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MOSFET N-CH 55V 100A TO-220 |
Data Sheet |
Negotiable |
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SPP100N06S2L-05 |
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MOSFET N-CH 55V 100A TO-220 |
Data Sheet |
Negotiable |
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Other |
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Data Sheet |
Negotiable |
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Data Sheet |
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Data Sheet |
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