(China (Mainland))
Product Summary
The TIP32C is a complementary silicon plastic power transistor designed for use in general purpose amplifier and switching applications.
Parametrics
TIP32C absolute maximum ratings: (1)Collector–Emitter Voltage, VCEO: 100 Vdc; (2)Collector–Base Voltage, VCB: 100 Vdc; (3)Emitter–Base Voltage, VEB: 5.0 Vdc; (4)Collector Current, Continuous, IC: 3.0Adc, Peak: 5.0Adc; (5)Base Current, IB: 1.0 Adc; (6)Total Power Dissipation, PD: 2.0Watts at TC = 25℃; 0.016W/℃ when Derate above 25℃; (7)Unclamped Inductive Load Energy, E: 32 mJ; (8)Operating and Storage Junction Temperature Range, TJ, Tstg: –65 to +150℃.
Features
TIP32C features: (1)Collector–Emitter Saturation Voltage : VCE(sat) = 1.2 Vdc (Max) @ IC = 3.0 Adc; (2)Collector–Emitter Sustaining Voltage: VCEO(sus) = 100 Vdc (Min); (3)High Current Gain: Bandwidth Product fT = 3.0 MHz (Min) @ IC = 500 mAdc; (4)Compact TO-220 AB Package.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
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 TIP32CG |
ON Semiconductor |
Transistors Bipolar (BJT) 3A 100V 40W PNP |
Data Sheet |
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TIP32CTU |
Fairchild Semiconductor |
Transistors Bipolar (BJT) PNP Epitaxial Silicon Transistor |
Data Sheet |
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TIP32CTSTU |
Fairchild Semiconductor |
Transistors Bipolar (BJT) PNP Epitaxial Sil Short Leads |
Data Sheet |
Negotiable |
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TIP32C-S |
Bourns |
Transistors Bipolar (BJT) 100V 3A PNP |
Data Sheet |
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TIP32CF |
Other |
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Data Sheet |
Negotiable |
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TIP32CE3 |
Other |
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Data Sheet |
Negotiable |
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TIP32C-BP |
Micro Commercial Components (MCC) |
Transistors Bipolar (BJT) PNP -100V -3A 40W |
Data Sheet |
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TIP32C |
Fairchild Semiconductor |
Transistors Bipolar (BJT) PNP Epitaxial Sil |
Data Sheet |
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