2N7000

2N7000, Small Signal MOSFET, 200 mA, 60V, TO-92, ON Semiconductor

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	US $0.01~100.00

PartNumber:: 2N7000

Brand:: ON Semiconductor - ON | Pack: TO | D/C: 10+

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Products Upload time: 2012-05-09

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Part Number:2N7000
US $0.01 - 100.00
A50L-0001-0175

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Product Summary

The 2N7000 is a small signal MOSFET.

Parametrics

2N7000 absolute maximum ratings: (1)Drain Source Voltage, VDSS: 60 Vdc; (2)Drain–Gate Voltage (RGS = 1.0 MW), VDGR: 60 Vdc; (3)Gate–Source Voltage, Continuous, VGS: ±20Vdc; Non–repetitive (tp 3 50 ms), VGSM: ±40Vpk; (4)Drain Current, Continuous, ID: 200mAdc; Pulsed, IDM: 500mAdc; (5)Total Power Dissipation @ TC = 25℃, PD: 350mW; Derate above 25℃, PD: 2.8mW/℃; (6)Operating and Storage Temperature Range, TJ, Tstg: -55 to +150℃.

Features

2N7000 features: (1)Drain–Source Breakdown Voltage (VGS = 0, ID = 10 μAdc), V(BR)DSS: 60Vdc; (2)Zero Gate Voltage Drain Current, (VDS = 48 Vdc, VGS = 0), IDSS: 1.0μAdc; (VDS = 48 Vdc, VGS = 0, TJ = 125℃), IDSS: 1.0mAdc; (3)Gate–Body Leakage Current, Forward, (VGSF = 15 Vdc, VDS = 0), IGSSF: 10 nAdc; (4)Gate Threshold Voltage,(VDS = VGS, ID = 1.0 mAdc),VGS(th): 0.8 to 3.0 Vdc; (5)Static Drain–Source On–Resistance, (VGS = 10 Vdc, ID = 0.5 Adc), rDS(on): 5.0 Ohm; (VGS = 4.5 Vdc, ID = 75 mAdc), rDS(on): 6.0 Ohm; (6)Drain–Source On–Voltage, (VGS = 10 Vdc, ID = 0.5 Adc), VDS(on): 2.5Vdc; (VGS = 4.5 Vdc, ID = 75 mAdc), VDS(on): 0.45Vdc; (7)On–State Drain Current,(VGS = 4.5 Vdc, VDS = 10 Vdc), Id(on): 75 mAdc; (8)Forward Transconductance, (VDS = 10 Vdc, ID = 200 mAdc), gfs: 100mmhos.