Product Summary

The 2SC1945 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers on HF band mobile radio applications.

Parametrics

2SC1945 absolute maximum ratings: (1)Collector to base voltage: 80V; (2)Emitter to base voltage: 5V; (3)Collector to emitter voltage: 40V; (4)Collector current: 6A; (5)Collector dissipation: Ta=25℃, 1.5W; Tc=25℃, 20W; (6)Junction tempearture: 150℃; (7)Storage temperature: -55 to 150℃; (8)Thermal resistance: junction to ambient, 83.3 ℃/W; junction to case, 6.25℃/W.

Features

2SC1945 features: (1)High power gain: Gpe≧14.5dB @ Vcc=12V, Po=14W, f=27MHz; (2)Emitter ballasted construction for high reliability and good performances; (3)TO-220 package similarly is combinient for mounting; (4)Ability of withstanding infinite load VSWR when operated at Vcc=16V, Po=18W, f=27MHz.

Diagrams

2SC1945 test circuit

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
2SC1945
2SC1945

Other


Data Sheet

Negotiable 
Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
2SC1004
2SC1004

Other


Data Sheet

Negotiable 
2SC1008
2SC1008

Other


Data Sheet

Negotiable 
2SC1027
2SC1027

Other


Data Sheet

Negotiable 
2SC1030
2SC1030

Other


Data Sheet

Negotiable 
2SC1034
2SC1034

Other


Data Sheet

Negotiable 
2SC1046
2SC1046

Other


Data Sheet

Negotiable