(China (Mainland))
Product Summary
The 2SC2539 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers in VHF band mobile radio applications.
Parametrics
2SC2539 absolute maximum ratings: (1)VCBO, collector to base votage: 35V; (2)VEBO, emitter to base voltage: 4V; (3)VCEO, collector to emitter votlage: 17V; (4)IC, collector current: 3.5A; (5)PC, collector dissipation: 175℃; (6)Tj, junction temperature: 175℃; (7)Tstg, storage temperature: -55 to 175℃.
Features
2SC2539 features: (1)high power gain; (2)emitter ballasted construction and gold metallization for high reliability and good performances; (3)low thermal resistance ceramic package with flange; (4)ability of withstanding more than 20:1 load VSWR when operated at VCC=15.2V, Po=18W, f=17MHz, Tc=25℃.
Diagrams
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 2SC2000 |
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2SC2001 |
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2SC2002 |
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2SC2003 |
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2SC2020 |
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2SC2021 |
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