Product Summary

The MRF150 is designed primarily for linear large-signal output stages up to 150 MHz.

Parametrics

MRF150 absolute maximum ratings: (1)Drain–Source Voltage VDSS: 125 Vdc; (2)Drain–Gate Voltage VDGO: 125 Vdc; (3)Gate–Source Voltage VGS: ±40 Vdc; (4)Drain Current Continuous ID: 16 Adc; (5)Total Device Dissipation @ TC = 25℃, PD 300 Watts, Derate above 25℃, 1.71W/℃; (6)Storage Temperature Range Tstg: –65 to +150 ℃; (7)Operating Junction Temperature TJ: 200 ℃.

Features

MRF150 features: (1)Superior high order IMD; (2)Specified 50V, 30MHz characteristics. Output power = 150 Watts. Power gain = 17 dB (Typ.); (3)Efficiency = 45% (Typ.); (4)100% tested for load mismatch at all phase angles.

Diagrams

MRF150 block diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
MRF150
MRF150

M/A-COM Technology Solutions

Transistors RF MOSFET Power 5-150MHz 150Watts 50Volt Gain 17dB

Data Sheet

0-1: $39.75
1-10: $35.78
10-25: $25.44
25-50: $24.65
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MRF15030

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MRF15090
MRF15090

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