(China (Mainland))
Product Summary
The SD1405 is a 12.5 V Class C epitaxial silicon NPN planar transistor designed primarily for HF communications. This device utilizes diffused emitter resistors to achieve infinte VSWR under rated operating conditions.
Parametrics
SD1405 absolute maximum ratings: (1)VCBO, Collector-Base Voltage: 36 V; (2)VCEO, Collector-Emitter Voltage: 18 V; (3)VEBO, Emitter-Base Voltage: 4.0 V; (4)IC, Device Current: 20 A; (5)PDISS, Power Dissipation: 270 W; (6)TJ, Junction Temperature: +200℃; (7)TSTG, Storage Temperature: -65 to +150℃.
Features
SD1405 features: (1)30 MHz; (2)12.5 Volts; (3)common emitter; (4)IMD -32 dB; (5)gold metallization; (6)Pout = 75 W min. with 13 dB gain.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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 SD1405 |
STMicroelectronics |
Transistors RF Bipolar Power NPN 12.5V 30MHz |
Data Sheet |
Negotiable |
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| Image | Part No | Mfg | Description | |
Pricing (USD) |
Quantity | ||||||||||||
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SD1400 |
Other |
|
Data Sheet |
Negotiable |
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SD1400A |
Other |
|
Data Sheet |
Negotiable |
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SD1405 |
STMicroelectronics |
Transistors RF Bipolar Power NPN 12.5V 30MHz |
Data Sheet |
Negotiable |
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SD1407 |
Advanced Semiconductor, Inc. |
Transistors RF Bipolar Power RF Transistor |
Data Sheet |
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SD1407-16 |
STMicroelectronics |
Transistors Bipolar (BJT) NPN 28.0V 30MHz |
Data Sheet |
Negotiable |
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SD1409 |
Other |
|
Data Sheet |
Negotiable |
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