IR2153D

gate driver IC, 8-DIP, -5 to 5mA, -0.3 to 625V, True micropower start up, Excellent latch immunity

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Price:: US $1.00~10.00 / piece [Get Latest Price]

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PartNumber:: IR2153D

Brand:: International Rectifier - IR | Pack: DIP | D/C: 10+

Availability:: Supply Ability: 10000/Week Can Ship Immediately
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Products Upload time: 2011-11-02

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Part Number:IR2153D
US $1.00 - 10.00
HCPL-7800A

US $2.50 - 4.10 / Piece
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IRF3205

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Product Summary

The IR2153D is a gate driver IC incorporated a high voltage half-bridge gate driver with a front end oscillator similar to the industry standard CMOS 555 timer. The IR2153D provides more functionality and is easier to use than previous ICs. A shutdown feature has been designed into the IR2153D CT pin, so that both gate driver outputs can be disabled using a low voltage control signal. In addition, the IR2153D gate driver output pulse widths are the same once the rising undervoltage lockout threshold on VCC has been reached, resulting in a more stable profile of frequency vs time at startup.

Parametrics

IR2153D absolute maximum ratings: (1)VB, High side floating supply voltage: -0.3 to 625V; (2)VS, High side floating supply offset voltage: VB - 25 to VB + 0.3V; (3)VHO, High side floating output voltage: VS - 0.3 to VB + 0.3V; (4)VLO, Low side output voltage: -0.3 to VCC + 0.3V; (5)VRT, RT pin voltage: -0.3 to VCC + 0.3V; (6)VCT, CT pin voltage: -0.3 to VCC + 0.3V; (7)ICC, Supply current: 25mA; (8)IRT, RT pin current: -5 to 5mA; (9)dVs/dt, Allowable offset voltage slew rate: -50 to 50 V/ns; (10)PD, Maximum power dissipation: 1.0W; (11)TJ, Junction temperature: -55 to 150℃; (12)TS, Storage temperature: -55 to 150 ℃; (13)TL, Lead temperature (soldering, 10 seconds): 300℃.

Features

IR2153D features: (1)Integrated 600V half-bridge gate driver; (2)15.6V zener clamp on Vcc; (3)True micropower start up; (4)Tighter initial deadtime control; (5)Low temperature coefficient deadtime; (6)Shutdown feature (1/6th Vcc) on CT pin; (7)Increased undervoltage lockout Hysteresis (1V); (8)Lower power level-shifting circuit; (9)Constant LO, HO pulse widths at startup; (10)Lower di/dt gate driver for better noise immunity; (11)Low side output in phase with RT; (12)Internal 50nsec (typ.) bootstrap diode (IR2153D); (13)Excellent latch immunity on all inputs and outputs; (14)ESD protection on all leads; (15)Also available LEAD-FREE.